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Chemical Disorder in Topological Insulators: A Route to Magnetism Tolerant Topological Surface States
Nano Letters
  • M. Carmen Martínez-Velarte, University of Zaragoza
  • Bernhard Kretz, Donostia International Physics Center
  • María Moro-Lagares, University of Zaragoza
  • Myriam H. Aguirre, University of Zaragoza
  • Trevor A. Riedemann, Ames Laboratory
  • Thomas A. Lograsso, Iowa State University and Ames Laboratory
  • Luis Morellón, University of Zaragoza
  • M. Ricardo Ibarra, University of Zaragoza
  • Arán Garcia-Lekue, Donostia International Physics Center
  • David Serrate, University of Zaragoza
Document Type
Article
Publication Version
Accepted Manuscript
Publication Date
7-12-2017
DOI
10.1021/acs.nanolett.7b00311
Abstract

We show that the chemical inhomogeneity in ternary three-dimensional topological insulators preserves the topological spin texture of their surface states against a net surface magnetization. The spin texture is that of a Dirac cone with helical spin structure in the reciprocal space, which gives rise to spin-polarized and dissipation-less charge currents. Thanks to the nontrivial topology of the bulk electronic structure, this spin texture is robust against most types of surface defects. However, magnetic perturbations break the time-reversal symmetry, enabling magnetic scattering and loss of spin coherence of the charge carriers. This intrinsic incompatibility precludes the design of magnetoelectronic devices based on the coupling between magnetic materials and topological surface states. We demonstrate that the magnetization coming from individual Co atoms deposited on the surface can disrupt the spin coherence of the carriers in the archetypal topological insulator Bi2Te3, while in Bi2Se2Te the spin texture remains unperturbed. This is concluded from the observation of elastic backscattering events in quasiparticle interference patterns obtained by scanning tunneling spectroscopy. The mechanism responsible for the protection is investigated by energy resolved spectroscopy and ab initio calculations, and it is ascribed to the distorted adsorption geometry of localized magnetic moments due to Se–Te disorder, which suppresses the Co hybridization with the surface states.

Comments

This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see DOI: 10.1021/acs.nanolett.7b00311. Posted with permission.

Copyright Owner
American Chemical Society
Language
en
File Format
application/pdf
Citation Information
M. Carmen Martínez-Velarte, Bernhard Kretz, María Moro-Lagares, Myriam H. Aguirre, et al.. "Chemical Disorder in Topological Insulators: A Route to Magnetism Tolerant Topological Surface States" Nano Letters Vol. 17 Iss. 7 (2017) p. 4047 - 4054
Available at: http://works.bepress.com/thomas_lograsso/264/