Article
Low Temperature Silicon Epitaxy on Hydrogen Terminated Si(100) Surfaces
Physical Review B
(2004)
Abstract
Si deposition on H terminated Si(001)-2×1 surfaces at temperatures 300–530K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. The post-growth annealing effect is analyzed. Hydrogen is shown to remain on the growth front up to at least 10ML. Si deposition onto the H/Si(001)-3×1 surface at 530K suggests that dihydride units further suppress Si adatom diffusion and increase surface roughness.
Keywords
- temperature,
- silicon,
- epitaxy,
- hydrogen terminated
Disciplines
Publication Date
January 1, 2004
Citation Information
J.-Y. Ji, T.-C. Shen, “Low Temperature Silicon Epitaxy on Hydrogen Terminated Si(100) Surfaces,” Phys. Rev. B70, 115309 (2004).