Phosphorous δ-doping layers were fabricated in silicon by PH3 deposition at room temperature, followed by low-temperature Si epitaxy.Scanning tunneling microscope images indicate large H coverage, and regions of c(2×2) structure. Hall data imply full carrier activation with mobility<40 cm2/V s when the surface coverage is ≲0.2 ML. Conductivity measurements show a ln(T) behavior at low temperatures, characteristic of a high-density two-dimensional conductor. Possible future applications to atom-scale electronics and quantum computation are briefly discussed.