Large positive magnetoresistance effect below Curie temperature in In1.90 − xMn0.1SnxO3

X. L. Wang, University of Wollongong
G. Peleckis, University of Wollongong
S. X. Dou, University of Wollongong
R. S. Liu, National Taiwan University
J. G. Zhu, University of Technology, Sydney

Article comments

This article was originally published as Wang, XL, Peleckis, G, Dou, SX, Liu, RS and Zhu, JG, Large positive magnetoresistance effect below Curie temperature in In1.90−xMn0.1SnxO3, Journal of Applied Physics Letters, 101, 2007, 109H121-1-09H121-3. Copyright American Institute of Physics 2007. Original journal article available here

Abstract

We report on the magnetoresistance (MR) and magnetic properties of In_1.90−xMn_0.1Sn_xO₃ (0≤x ≤0.06) oxide. All samples were found to be ferromagnetic below T_C=46 K. Sn doping changed In_1.90Mn_0.1O₃ from an insulator to a highly conducting phase at 300 K. A positive MR effect was observed over a wide temperature range just below T_C. Calculated MR values reached a maximum of 20% at 5 K. A change in the MR effect, from positive to negative, occurred under magnetic field H>4 T at 5 K. The results of x-ray absorption near-edge spectroscopy indicated that Mn ions are present both as Mn²⁺ and Mn⁴⁺.