High temperature ferromagnetism in Ni-doped In2O3 and indium-tin oxide
This article was originally published as: Peleckis, G, Wang, X & Dou, S, High temperature ferromagnetism in Ni-doped In2O3 and indium-tin oxide, Applied Physics Letters, 89, 2006, 022501. Original journal available here.
Observation of high temperature ferromagnetism in Ni-doped In2O3 and indium-tin-oxide (ITO) samples prepared by a solid state synthesis route is reported. Both Ni-doped compounds showed a clear ferromagnetism above 300 K with the magnetic moments of 0.03–0.06µB/Ni and 0.1µB/Ni at 300 and 10 K, respectively. Ni-doped In2O3 samples showed a typical semiconducting behavior with a room temperature resistivity of rho~2 Omega cm, while Ni-doped ITO samples were metallic with rho~2×10–2 Omega cm. Analysis of different conduction mechanisms suggested that variable range hopping model explains our rho-T data for the Ni-doped In2O3 sample the best.
G. Peleckis, X. L. Wang, and S. X. Dou. "High temperature ferromagnetism in Ni-doped In2O3 and indium-tin oxide" Faculty of Engineering - Papers (2006).
Available at: http://works.bepress.com/sxdou/54