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Significant improvement of activation energy in MgB2/Mg2Si multilayer films

Y. Zhao, University of Wollongong
S. X. Dou, University of Wollongong
M. Ionescu, ANSTO, Australia
P. Munroe, University of New South Wales

Article comments

This article was originally published as Zhao, Y & Dou, SX, Significant improvement of activation energy in MgB2/Mg2Si multilayer films, Applied Physics Letters, 2006, 88, 012502. Original journal available here.

Abstract

We obtained a MgB2/Mg2Si multilayer structure by sequentially switching a stoichiometric MgB2 target and a Si target during off-axis pulsed-laser deposition. The transmission-electron-microscopic cross-sectional image of the resulting film exhibits a layered structure with each MgB2 layer being 40–50 nm thick and the Mg2Si interlayers about 5 nm thick. A clearly enhanced anisotropy in the irreversibility lines and the vortex activation energy was observed. Pinning and the flux flow activation energy are significantly increased in parallel applied fields.

Suggested Citation

Y. Zhao, S. X. Dou, M. Ionescu, and P. Munroe. "Significant improvement of activation energy in MgB2/Mg2Si multilayer films" Faculty of Engineering - Papers (2006).
Available at: http://works.bepress.com/sxdou/37