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Transport properties of multilayered MgB2/Mg2Si superconducting thin film

Y. Zhao, University of Wollongong
M. J. Qin, University of Wollongong
S. X. Dou, University of Wollongong
M. Ionescu, ANSTO, Australia
P. Munroe, University of New South Wales

Article comments

This article was originally published as: Zhao, Y, Qin, MJ, Dou, SX, Ionescu, M & Munroe, P, Transport properties of multilayered MgB2/Mg2Si superconducting thin film, Journal of Applied Physics, April 2006, 99, 08M503. Copyright American Institute of Physics. Original journal available here.

Abstract

Electronic transport measurements have been carried out on superconducting MgB2/Mg2Si multilayer film, using a standard four-probe method in perpendicular and parallel applied fields. The film, which was prepared by pulsed-laser deposition, has a layered structure with each MgB2 layer being 40–50 nm thick and the Mg2Si interlayers about 5 nm thick. The flux flow activation energy is deduced from the resistivity-temperature curves using an Arrhenius fit. The results show a clearly enhanced anisotropy of the vortex activation energy in the multilayered film. The irreversibility field and the vortex activation energy are significantly increased in parallel fields.

Suggested Citation

Y. Zhao, M. J. Qin, S. X. Dou, M. Ionescu, and P. Munroe. "Transport properties of multilayered MgB2/Mg2Si superconducting thin film" Faculty of Engineering - Papers (2006).
Available at: http://works.bepress.com/sxdou/22