The effect of doping level and sintering temperature on Jc(H) performance in nano-SiC doped and pure MgB2 wires

O. Shcherbakova, University of Wollongong
S. X. Dou, University of Wollongong
S. Soltanian, University of Wollongong
D. Wexler, University of Wollongong
M. Bhatia, Ohio State University, USA
M. Sumption, Ohio State University, USA
E. W. Collings, Ohio State University, USA

Article comments

This article was originally published as Shcherbakova, O, Dou, SX, Soltanian, S et al, The effect of doping level and sintering temperature on Jc(H) performance in nano-SiC doped and pure MgB2 wires, Journal of Applied Physics, 99, 2006. Copyright American Institute of Physics. Original journal available here.

Abstract

Nanoscale SiC doped Fe/MgB2 wire samples were prepared by an in situ reaction technique using SiC doping levels of 0, 5, 10, and 15 wt %. Samples were heat treated at different temperatures using different temperature profiles. The effects of doping level and sintering temperature on superconducting properties of wire samples were investigated. The important finding of this study was that the enhancement in Jc
H by nano-SiC doping can be achieved at different field regions by appropriate compromising of the doping level and sintering temperature.