Magnetic storage device using induced magnetic reversal of a cobalt

Scott Whittenburg, University of New Orleans

Abstract

The effects of the applied field, cell size, and cutting area on the ‘‘seed’’ induced magnetic reversal of a cobalt element array have been studied by a stochastic dynamic micromagnetics code using the Laudau–Lifshitz–Gilbert equation. Three magnetic reversal mechanisms under different magnitudes of the applied field have been investigated by examining the energy profiles. To minimize the effect of the thermal fluctuations on the switching time, an applied field with magnitude around 0.7 or 0.8 T and an element array with cutting area less than 10 nm310 nm are required. By using the smaller cellsize, the switching time and the storage density of the element array can be improved. A sinusoidal applied field with a period of 0.1 ns was used to generate a single switching event.