Dual-Beam Actuation of Piezoelectric AlN RF MEMS Switches Monolithically Integrated with AlN Contour-Mode Resonators
Postprint version. Published in Journal of Micromechanics and Microengineering, Volume 18, Issue 10, Article No. 105011, October 2008.
This work reports on piezoelectric Aluminum Nitride (AlN) based dual-beam RF MEMS switches that have been monolithically integrated with AlN contour-mode resonators. The dual-beam switch design presented in this paper intrinsically compensates for the residual stress in the deposited films, requires low actuation voltage (5 to 20 V), facilitates active pull-off to open the switch and exhibits fast switching times (1 to 2 μs). This work also presents the combined response (cascaded S parameters) of a resonator and a switch that were co-fabricated on the same substrate. The response shows that the resonator can be effectively turned on and off by the switch. A post-CMOS compatible process was used for the co-fabrication of both the switches and the resonators. The single-chip RF solution presented herein constitutes an unprecedented step forward towards the realization of compact, low loss and integrated multi-frequency RF front-ends.
Rashed Mahameed, Nipun Sinha, Marcelo B. Pisani, and Gianluca Piazza. "Dual-Beam Actuation of Piezoelectric AlN RF MEMS Switches Monolithically Integrated with AlN Contour-Mode Resonators" Departmental Papers (ESE) (2008).
Available at: http://works.bepress.com/sinha/6