Articles
Comparison of Contactless Measurement and Testing Techniques to a New All-Silicon Optical Test and Characterization Method (with David V. Kerns and Selahattin Sayil), IEEE Transactions on Instrumentation and Measurement (2005)
The rapid improvement in performance and increased density of electronic devices in integrated circuits has...
The Olin Curriculum: Thinking Toward the Future (with Mark Somerville; David Anderson; Hillary Berbeco; John Bourne; Jill Crisman; Diana Dabby; Helen Donis-Keller; Stephen Holt; David V. Kerns, Jr.; Robert Martello; Richard Miller; Michael Moody; Gill Pratt; Joanne C. Pratt; Christina Shea; Stephen Schiffman; Sarah Spence Adams; Lynn Andrea Stein; Jonathan Stolk; Brian D. Storey; Burt S. Tilley; Benjamin Vandiver; and Yevgeniya Zastavker), IEEE Transactions on Education (2005)
In 1997, the F. W. Olin Foundation of New York established the Franklin W. Olin...
Analysis of Electroluminescence Spectra of Silicon and Gallium Arsenide p-n Junctions in Avalanche Breakdown (with M. Lahbabi; A. Ahaitouf; M. Fliyou; E. Abarkan; J.-P. Charles; A. Bath; A. Hoffmann; and David V. Kerns, Jr.), Journal of Applied Physics (2004)
We present a generalized study of light emission from reverse biased p–n junctions under avalanche...
Simulation of Gallium Arsenide Electroluminescence Spectra in Avalanche Breakdown Using Self-Absorption and Recombination Models (with David V. Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J P. Charles, and Bharat L. Bhuva), Applied Physics Letters (2002)
Light emission from gallium arsenide (GaAs) p–n junctions biased in avalanche breakdown have been modeled...
The Search for Design in Electrical Engineering Education (with David V. Kerns, Mark Somerville, Gill Pratt, and Jill Crisman), First IEEE International Workshop on Electronic Design, Test, and Applications (2002)
The importance of "design" in engineering education is well established and a cornerstone of most...
Analyses of Electroluminescence Spectra of Silicon Junctions in Avalanche Breakdown Using an Indirect Interband Recombination Model (with David V. Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J P. Charles, and Bharat L. Bhuva), Applied Physics Letters (2000)
Light emission from a p-n junction biased in avalanche breakdown has been modeled over the...
Evaluation and Design Optimization of Piezoresistive Gauge Factor of Thick-Film Resistors (with David V. Kerns, C. Song, J. l. Davidson, and W. P. Kang), Proceedings of IEEE Southeastcon (1991)
On the basis of the analysis of all the thick- film design methodologies, the authors...
Single-Event Charge Enhancement in SOI Devices (with David V. Kerns, L W. Massengill, and M L. Alles), IEEE Electron Device Letters (1990)
Studies are presented of single-particle ion effects in body-tied CMOS/silicon-on-insulator (SOI) devices. It is shown...