Simulation of Gallium Arsenide Electroluminescence Spectra in Avalanche Breakdown Using Self-Absorption and Recombination Models
© 2002 American Institute of Physics. This article was published in Applied Physics Letters, vol. 80, iss. 6, p. 1004-1006 and may be found here.
Light emission from gallium arsenide (GaAs) p–n junctions biased in avalanche breakdown have been modeled over the range of 1.4–3.4 eV. The model emphasizes direct and indirect recombination processes and bulk self-absorption. Comparisons between measured and simulated spectra for sample junctions from custom and commercially fabricated GaAs devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device theory. The model also predicts the junction depth with accuracy.
David V. Kerns, Sherra E. Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J P. Charles, and Bharat L. Bhuva. "Simulation of Gallium Arsenide Electroluminescence Spectra in Avalanche Breakdown Using Self-Absorption and Recombination Models" Applied Physics Letters 80.6 (2002): 1004-1006.
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