THz Emission from Mercury Cadmium Telluride Films Grown on Cadmium Zinc Telluride Substrates
This paper was originally published as: Mendis, R, Smith, ML, Vickers, REM, Lewis, RA & Zhang, C, THz Emission from Mercury Cadmium Telluride Films Grown on Cadmium Zinc Telluride Substrates, Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006 (IRMMW-THz 2006), Shanghai, China, 18-22 Sepember 2006, 434-434. Copyright 2006 IEEE.
We have observed THz emission from single- and double-layer HgCdTe (MCT) films epitaxially grown on CdZnTe substrates photoexcited by femtosecond laser pulses. The emitted THz radiation was electro-optically detected in reflection-mode at the 45° specular direction. There is a dramatic variation in the emitted signal level from the double-layer samples, whereas the signal level from the single-layer samples shows a relatively constant variation with composition and/or geometry. For the double-layer samples, the highest peak amplitude recorded is 1/5 of that of an InAs emitter, analogous to double that of a standard ZnTe emitter, and shows promise for further enhancement.
R. Mendis, M. L. Smith, R. E. Vickers, R. A. Lewis, and C. Zhang. " THz Emission from Mercury Cadmium Telluride Films Grown on Cadmium Zinc Telluride Substrates" Faculty of Engineering - Papers.. Sep. 2006.
Available at: http://works.bepress.com/rlewis/8