THz Emission from Mercury Cadmium Telluride Films Grown on Cadmium Zinc Telluride Substrates

R. Mendis, University of Wollongong
M. L. Smith, University of Wollongong
R. E. Vickers, University of Wollongong
R. A. Lewis, University of Wollongong
C. Zhang, University of Wollongong

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This paper was originally published as: Mendis, R, Smith, ML, Vickers, REM, Lewis, RA & Zhang, C, THz Emission from Mercury Cadmium Telluride Films Grown on Cadmium Zinc Telluride Substrates, Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006 (IRMMW-THz 2006), Shanghai, China, 18-22 Sepember 2006, 434-434. Copyright 2006 IEEE.

Abstract

We have observed THz emission from single- and double-layer HgCdTe (MCT) films epitaxially grown on CdZnTe substrates photoexcited by femtosecond laser pulses. The emitted THz radiation was electro-optically detected in reflection-mode at the 45° specular direction. There is a dramatic variation in the emitted signal level from the double-layer samples, whereas the signal level from the single-layer samples shows a relatively constant variation with composition and/or geometry. For the double-layer samples, the highest peak amplitude recorded is 1/5 of that of an InAs emitter, analogous to double that of a standard ZnTe emitter, and shows promise for further enhancement.