Terahertz Emission from (100) p-InA

M. L. Smith, University of Wollongong
R. Mendis, University of Wollongong
R. E. M. Vickers, University of Wollongong
R. A. Lewis, University of Wollongong

Article comments

This paper was originally published as: Smith, ML, Mendis, R, Vickers, REM and Lewis, RA, Terahertz Emission from (100) p-InA, Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, (IRMMW-THz 2005), 19-23 September 2005, 1, 253-254. Copyright IEEE 2005.

Abstract

Terahertz emission from (100) p-type InAs illuminated by ultrafast near-infrared pulses is investigated. A two-fold rotational symmetry was observed when rotated about the surface normal. A quadratic relationship was found for the emission dependence on optical pump power. These suggest the presence of photo-carrier transport and optical rectification mechanisms. The InAs emission was found to exceed that of a blackbody radiator for frequencies below 1 THz for nominal input power levels. The generated power was found to be roughly two orders of magnitude greater than a 1mm ZnTe emitter.