Energy states of Be in GaAs

R. A. Lewis, University of Wollongong
T. S. Cheng, University of Nottingham, UK
M. Henini, University of Nottingham, UK
J. M. Chamberlain, University of Nottingham, UK

Article comments

This article was originally published as: Lewis, RA, Cheng, TS, Henini, M & Chamberlain, JM, Energy states of Be in GaAs, Physical Review B, 1996, 53(19), 12829-12834. Copyright 1996 American Physical Society. The original journal can be found here.

Abstract

Far-infrared absorption due to Lyman transitions of the Be acceptor in GaAs has been measured in bulk molecular-beam-epitaxy-grown samples at various temperatures and under different illumination conditions. Sharp lines of energy at 1.9 K of 134.420.06, 166.760.05, and 182.300.05 cm1 are observed, being the G, D, and C lines, respectively. Fiorentini’s recent calculation Phys. Rev. B 51, 10 161 1995 of the acceptor energy spectrum in GaAs is in good agreement with these results. At 1.9 K the G, D, and C linewidths are 1.060.14, 1.160.04, and 1.860.05 cm1, respectively, and the integrated intensities are in the ratio 11.55.6:100:57.69.8. External illumination during cooling or measurement had no effect on the observed spectra.