Central-cell corrections for Si and S in GaAs in a strong magnetic field

R. J. Heron, University of Wollongong
R. A. Lewis, University of Wollongong
P. E. Simmonds, University of Wollongong
R. P. Starrett, University of New South Wales
A. V. Skougarevsky, University of New South Wales
R. G. Clark, University of New South Wales
C. R. Stanley, University of Glasgow

Article comments

This article was originally published as Heron, RJ, Lewis, RA, Simmonds, PE, Starrett, RP, Skougarevsky, AV, Clark, RG and Stanley, CR, Central-cell corrections for Si and S in GaAs in a strong magnetic field, Journal of Applied Physics, 85(2), 1999, 893-896. Copyright American Institute of Physics 1999. Original journal article available here

Abstract

The central-cell correction has been determined experimentally for the two donor impurities S and Si in GaAs. Data have been obtained for magnetic fields to 39 T, corresponding to γ~6. The observed behavior is in good agreement with theory. The analysis permits accurate evaluation of zero-field central-cell corrections, yielding 0.110 and 0.059 meV for S and Si, respectively.