Characterisation of indium phosphide using terahertz radiation
This paper originally appeared as: Causley, RL & Lewis, RA, Characterisation of indium phosphide using terahertz radiation, International Semiconducting and Insulating Materials Conference, 3-7 July 2000, 101-104. Copyright IEEE 2000.
Specimens of undoped, n-type and p-type bulk InP have been investigated using THz radiation. Reflection spectroscopy permits the determination of the TO and LO phonon energies as well as the carrier concentration. Absorption spectroscopy reveals transitions between impurity states. We report the first absorption spectrum of an acceptor in InP. The transition energies agree well with electronic Raman scattering and photoluminescence data.
R. L. Causley and R. A. Lewis. "Characterisation of indium phosphide using terahertz radiation" Faculty of Engineering - Papers.. Jul. 2000.
Available at: http://works.bepress.com/rlewis/17