Article
Quantum Dot Resonant Tunneling Diodes for Telecom Wavelength Single Photon Detection
Proceedings of SPIE: Optoelectronic Devices: Physics, Fabrication, and Application IV
(2007)
Abstract
Single photon detection was realized at a telecom wavelength with quantum dot resonant tunneling diodes grown on an InP substrate. The structure contains a AlAs/In0.53Ga0.47As/AlAs quantum well with InAs quantum dots grown on the top AlAs barrier. The single photon detection efficiency of the device under 1310 nm illumination was measured to be about 0.35% ± 0.07% with a dark count rate of 1.58×10-6 ns-1. This corresponds to an internal efficiency of 6.3%.
Keywords
- single photon detector,
- InAs self-assembled quantum dot,
- resonant tunneling diode
Disciplines
Publication Date
September 9, 2007
Publisher Statement
Copyright 2007, Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. doi: 10.1117/12.737307
Citation Information
H. W. Li, Paul J. Simmonds, H. E. Beere, B. E. Kardynał, et al.. "Quantum Dot Resonant Tunneling Diodes for Telecom Wavelength Single Photon Detection" Proceedings of SPIE: Optoelectronic Devices: Physics, Fabrication, and Application IV Vol. 6766 (2007) Available at: http://works.bepress.com/paul_simmonds/8/