Article
Tensile Strained Island Growth at Step-Edges on GaAs(110)
Applied Physics Letters
(2010)
Abstract
We report the growth of tensile strained GaP islands on a GaAs(110) surface. Three-dimensional island formation proceeds via a step-edge nucleation process. To explain the dislocation-free nature of these islands, we consider the kinetics of strain relief within the context of a model for dislocation glide as a function of surface orientation and sign of strain.
Keywords
- nucleation,
- III-V semiconductors,
- surface stains,
- self assembly,
- semiconductor growth
Disciplines
Publication Date
October 11, 2010
Publisher Statement
This document was originally published by AIP Publishing in Applied Physics Letters. Copyright restrictions may apply. doi: 10.1063/1.3498676
Citation Information
Paul J. Simmonds and M. L. Lee. "Tensile Strained Island Growth at Step-Edges on GaAs(110)" Applied Physics Letters Vol. 97 Iss. 15 (2010) Available at: http://works.bepress.com/paul_simmonds/25/