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Article
Self-Assembled In0.5Ga0.5As Quantum Dots on GaP
Applied Physics Letters (2010)
  • Yuncheng Song, Yale University
  • Paul J. Simmonds, Yale University
  • Minjoo Larry Lee, Yale University
Abstract

We demonstrate the growth and luminescence of coherently strained In0.5Ga0.5As self-assembled quantum dots on GaP. Cross-sectional and planar-view transmission electron microscopy confirmed the dislocation-free nature of the In0.5Ga0.5As quantum dots and GaP cap layers. Intense photoluminescence from the quantum dots was measured at 80 K and was visible to the unaided eye in ambient lighting. The photoluminescence results show that emission energy can be controlled by varying the In0.5Ga0.5As deposition thickness. In combination with recent advances in the growth of GaP on Si, the In0.5Ga0.5As quantum dots demonstrated here could enable monolithic optoelectronic integration on Si.

Keywords
  • III-V semiconductors,
  • photoluminescence,
  • epitaxy,
  • reflection high energy electron diffraction,
  • quantum dots
Disciplines
Publication Date
November 29, 2010
Publisher Statement
This document was originally published by AIP Publishing in Applied Physics Letters. Copyright restrictions may apply. doi: 10.1063/1.3522647
Citation Information
Yuncheng Song, Paul J. Simmonds and Minjoo Larry Lee. "Self-Assembled In0.5Ga0.5As Quantum Dots on GaP" Applied Physics Letters Vol. 97 Iss. 22 (2010)
Available at: http://works.bepress.com/paul_simmonds/24/