GaAsxP1−x graded buffers were grown via solid source molecular beam epitaxy(MBE) to enable the fabrication of wide-bandgap InyGa1−yP solar cells. Tensile-strained GaAsxP1−x buffers grown on GaAs using unoptimized conditions exhibited asymmetric strain relaxation along with formation of faceted trenches, 100–300 nm deep, running parallel to the [011] direction. We engineered a 6 μm thick grading structure to minimize the faceted trench density and achieve symmetric strain relaxation while maintaining a threading dislocation density of ≤106 cm−2. In comparison, compressively-strained graded GaAsxP1−x buffers on GaP showed nearly-complete strain relaxation of the top layers and no evidence of trenches but possessed threading dislocation densities that were one order of magnitude higher. We subsequently grew and fabricated wide-bandgap InyGa1−yP solar cells on our GaAsxP1−x buffers. Transmission electron microscopy measurements gave no indication of CuPt ordering. We obtained open circuit voltage as high as 1.42 V for In0.39Ga0.61P with a bandgap of 2.0 eV. Our results indicate MBE-grown InyGa1−yP is a promising material for the top junction of a future multijunction solar cell.