Article
Self-Assembly on (111)-Oriented III-V Surfaces
Applied Physics Letters
(2011)
Abstract
We demonstrate the self-assembly of tensile strained GaP into three-dimensional dots on GaAs(111)A. Size and areal density of the dislocation-free GaPdots are readily tunable with both substrate temperature and deposition thickness. GaP dot growth obeys island scaling theory, allowing us to predict dot size distributions a priori.
Keywords
- III-V semiconductors,
- self assembly,
- surface strains,
- epitaxy,
- magnetic islands
Disciplines
Publication Date
September 19, 2011
Publisher Statement
This document was originally published by AIP Publishing in Applied Physics Letters. Copyright restrictions may apply. doi: 10.1063/1.3640501
Citation Information
Paul J. Simmonds and Minjoo Larry Lee. "Self-Assembly on (111)-Oriented III-V Surfaces" Applied Physics Letters Vol. 99 Iss. 12 (2011) Available at: http://works.bepress.com/paul_simmonds/19/