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Article
Quantum Dot Resonant Tunneling Diode for Telecommunication Wavelength Single Photon Detection
Applied Physics Letters (2007)
  • H. W. Li
  • B. E. Kardynał
  • P. See
  • A. J. Shields
  • P. Simmonds, University of Cambridge
  • H. E. Beere, University of Cambridge
  • D. A. Ritchie, University of Cambridge
Abstract

The authors present a quantum dot (QD) based single photon detector operating at a fiber optic telecommunication wavelength. The detector is based on an AlAs/In0.53Ga0.47As/AlAs double-barrier resonant tunneling diode containing a layer of self-assembled InAs QDs grown on an InP substrate. The device shows an internal efficiency of about 6.3% with a dark count rate of 1.58 × 10−6 ns−1 for 1310 nm photons.

Keywords
  • photons,
  • III-V semiconductors,
  • quantum dots,
  • discriminators,
  • etching
Publication Date
August 13, 2007
Publisher Statement
This document was originally published by AIP Publishing in Applied Physics Letters. Copyright restrictions may apply. doi: 10.1063/1.2768884
Citation Information
H. W. Li, B. E. Kardynał, P. See, A. J. Shields, et al.. "Quantum Dot Resonant Tunneling Diode for Telecommunication Wavelength Single Photon Detection" Applied Physics Letters Vol. 91 Iss. 7 (2007)
Available at: http://works.bepress.com/paul_simmonds/10/