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Article
Low-temperature epitaxial growth of thin metal films
Physical Review B
  • James W. Evans, Iowa State University
  • D. E. Sanders, Iowa State University
  • Patricia A. Thiel, Iowa State University
  • Andrew E. DePristo, Iowa State University
Document Type
Article
Publication Date
3-15-1990
DOI
10.1103/PhysRevB.41.5410
Abstract

We present a different mechanism to explain the occurrence of long-lived oscillations in diffraction spot intensities during epitaxial growth of metal films on fcc (100) substrates at low temperature. Rather than rely on the common picture of cyclical nucleation and growth to produce the oscillations, the model invokes ‘‘downward funneling’’ deposition dynamics to fourfold-hollow adsorption sites.

Comments

This article is from Physical Review B 41, no. 8 (1990): 5410–5413, doi:10.1103/PhysRevB.41.5410.

Copyright Owner
American Physical Society
Language
en
File Format
application/pdf
Citation Information
James W. Evans, D. E. Sanders, Patricia A. Thiel and Andrew E. DePristo. "Low-temperature epitaxial growth of thin metal films" Physical Review B Vol. 41 Iss. 8 (1990) p. 5410 - 5413
Available at: http://works.bepress.com/patricia_thiel/87/