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Article
Modeling Yield of Carbon-Nanotube/Silicon-Nanowire FET-Based Nanoarray Architecture with H-Hot Addressing Scheme
Proceedings of the 19th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (2004, Cannes, France)
  • Shanrui Zhang
  • Minsu Choi, Missouri University of Science and Technology
  • Nohpill Park
Abstract

With molecular-scale materials, devices and fabrication techniques recently being developed, high-density computing systems in the nanometer domain emerge. An array-based nanoarchitecture has been recently proposed based on nanowires such as carbon nanotubes (CNTs) and silicon nanowires (SiNWs). High-density nanoarray-based systems consisting of nanometer-scale elements are likely to have many imperfections; thus, defect-tolerance is considered one of the most significant challenges. In this paper we propose a probabilistic yield model for the array-based nanoarchitecture. The proposed yield model can be used (1) to accurately estimate the raw and net array densities, and (2) to design and optimize more defect and fault-tolerant systems based on the array-based nanoarchitecture. As a case study, the proposed yield model is applied to the defect-tolerant addressing scheme called h-hot addressing and simulation results are discussed.

Meeting Name
19th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (2004: Oct. 10-13, Cannes, France)
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
  • C,
  • CNT,
  • FET-Based Nanoarray Architecture,
  • Si,
  • SiNW,
  • Array-Based Nanoarchitecture,
  • Carbon Nanotubes,
  • Circuit Simulation,
  • Computer Architecture,
  • Defect-Tolerance,
  • Defect-Tolerant Addressing Scheme,
  • Defect-Tolerant Systems,
  • Elemental Semiconductors,
  • Fabrication Techniques,
  • Fault-Tolerant Systems,
  • H-Hot Addressing Scheme,
  • High-Density Computing Systems,
  • Integrated Circuit Modelling,
  • Integrated Circuit Technology,
  • Integrated Circuit Yield,
  • Molecular-Scale Materials,
  • Nanoelectronics,
  • Nanometer-Scale Elements,
  • Nanotube Devices,
  • Nanowires,
  • Net Array Densities,
  • Probabilistic Yield Model,
  • Raw Array Densities,
  • Silicon,
  • Silicon Nanowires,
  • Simulation,
  • Yield Modeling
International Standard Book Number (ISBN)
769522416
Document Type
Article - Conference proceedings
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2004 IEEE Computer Society, All rights reserved.
Publication Date
10-1-2004
Publication Date
01 Oct 2004
Citation Information
Shanrui Zhang, Minsu Choi and Nohpill Park. "Modeling Yield of Carbon-Nanotube/Silicon-Nanowire FET-Based Nanoarray Architecture with H-Hot Addressing Scheme" Proceedings of the 19th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (2004, Cannes, France) (2004) p. 356 - 364 ISSN: 1550-5774
Available at: http://works.bepress.com/minsu-choi/69/