We have observed dielectronic and direct excitation of H-like S15+ and Ca19+ and He-like Ti20+ ions in silicon channels caused by collision with weakly bound target electrons which behave as a free-electron gas. As in vacuo, relaxation of the doubly excited states can occur radiatively leading to ions of decreased charge, but in a crystal channel collisional effects can cause double ionization. The effects are seen in both the x-ray yields and charge-state fractions, and, in the case of Ti20+, in charge-state x-ray coincidences.