The structure and reactivity of unsaturated singlet silicon-nitrogen compounds is theoretically investigated. Ab initio calculations demonstrate that the planar silylene HSiNH2 is the global minimum on the SiNH3 surface, with the planar doubly bound species H2SiNH 18 kcaljmol higher in energy. The internal rotational barriers are computed to be 26.9 kcaljmol for HSiNH2 and 37.9 kcaljmol for H2SiNH. However, the barrier for the inversion of H2SiNH is only 5.6 kcaljmol, so that inversion is favored over rotation for this species. The isomerization connecting H2SiNH to HSiNH2 has a barrier of 60 kcaljmol. The transition-state structures, as well as the exothermicities of the concerted hydrogenation processes of both compounds, are also examined.