Optimal Design of Integrally Gated CNT Field-Emission Devices Using A Genetic Algorithm

P. Y. Chen, National Nano Device Laboratories
Chien Hsun Chen, National Nano Device Laboratories
J. S. Wu, National Chiao Tung University
H. C. Wen, National Chiao Tung University
W. P. Wang, National Chiao Tung University

Abstract

A method to optimize the focusing quality of integrally gated CNT field-emission (FE) devices by combining field-emission modeling and a computational intelligence technique, genetic algorithm (GA), is proposed and demonstrated. In this work, the e-beam shape, as a characteristic parameter of electron-optical properties, is calculated by field-emission simulation modeling. Using a design tool that combines GA and physical modeling, a set of structural and electrical parameters for four FE device groups, including double-gate, triple-gate, quadruple-gate and quintuple-gate type, were optimized. The resultant FE devices exhibit satisfactory e-beam focusabilities and the extracted parameters with the best performance for each type of FE device were represented to be fabricated by a VLSI technique. The GA-based automatic design parameter extraction will significantly benefit the design of integrated electron-optical systems for versatile vacuum micro- and nano-electronic applications.