Universal properties of linear magnetoresistance in strongly disordered MnAs-GaAs composite semiconductors

H. G. Johnson, Northeastern University
S. P. Bennett, Northeastern University
R. Barua, Northeastern University
L. H. Lewis, Northeastern University
D. Heiman, Northeastern University

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Published in: Physical Review B, v.82 no.8: 085202 (2010). DOI: 10.1103/PhysRevB.82.085202

Abstract

Linear magnetoresistance (LMR) occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered MnAs-GaAs composite material, it is found that the magnitude of the LMR is numerically equal to the carrier mobility over a wide range and is independent of carrier density. This behavior is complementary to the Hall effect that is independent of the mobility and dependent on the carrier density. Moreover, the LMR appears to be insensitive to the details of the disorder and points to a universal explanation of classical LMR that can be applied to other material systems.