Articles «Previous Next»

Two Transistor Current Mode Active Pixel Sensor

Viktor Gruev, University of Pennsylvania
Zheng Yang, University of Pennsylvania
Jan Van der Spiegel, University of Pennsylvania
Ralph Etienne-Cummings, Johns Hopkins University

Article comments

Copyright 2007 IEEE. Published in the Proceedings of the IEEE International Symposium of Circuits and Systems (ISCAS), May 2007, pages 2846-2849.

This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Pennsylvania's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Abstract

A novel current mode active pixel sensor for high resolution imaging is presented. The photo pixel is composed of a photodiode and two transistors: reset and transconductance amplifier transistor. The switch transistor is moved outside the pixel, allowing for lower pixel pitch and increased linearity of the output photocurrent. The increased linearity of the image sensor has greatly reduced spatial variations across the image after correlated double sampling and the column fix pattern noise is 0.35% of the saturated current. A discussion on theoretical temporal noise limitations of this design is also presented.

Suggested Citation

Viktor Gruev, Zheng Yang, Jan Van der Spiegel, and Ralph Etienne-Cummings. "Two Transistor Current Mode Active Pixel Sensor" Departmental Papers (ESE) (2007).
Available at: http://works.bepress.com/jan_vanderspiegel/3