Analytical and Experimental Studies of Thermal Noise in MOSFET's

Suharli Tedja, University of Pennsylvania
Jan Van der Spiegel, University of Pennsylvania
Hugh H. Williams, University of Pennsylvania

Article comments

Copyright 1994 IEEE. Reprinted from IEEE Transactions on Electron Devices, 1994, Volume 41, Issue 11, November 1994, pages 2069-2075.
Publisher URL: 10.1109/16.333824

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Abstract

An analysis of the channel thermal noise in MOSFET's, based on the one-dimensional charge sheet model, is presented. The analytical expression is valid in the strong, moderate, and weak inversion regions. The body effect on the device parameters relevant to the thermal noise is discussed. A measurement technique as well as experimental results of P- and N-MOSFET's of a 1.2 µm radiation hard CMOS process are presented. The calculated channel thermal noise coefficient gamma as in i_d²/Δf=4kT γ g_do agrees well with experimental data for effective device channel length as short as 1.7µm.