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Article
Microwave Dielectric Properties of Epitaxial Mn-doped Ba(Zr,Ti)O-3 Thin Films on LaAlO3 Substrates
Ferroelectrics Letters Section
  • Ming Liu, Xi'an Jiaotong University
  • Chunrui Ma, University of Texas at San Antonio
  • Jian Liu, University of Texas at San Antonio
  • Gregory Collins, University of Texas at San Antonio
  • Chonglin Chen, University of Texas at San Antonio
  • Andy D. Alemayehu, University of Dayton
  • Guru Subramanyam, University of Dayton
  • Chao Dai, University of Electronic Science and Technology of China
  • Yuan Lin, University of Electronic Science and Technology of China
  • Amar Bhalla, University of Texas at San Antonio
Document Type
Article
Publication Date
8-13-2013
Abstract

Environmental friendly ferroelectric relaxor Ba(Zr0.2Ti0.8)O3 thin films with an additional 2% Mn dopant were epitaxially fabricated on the (001) LaAlO3 single crystal substrates by pulsed laser deposition. Microstructure characterizations from x-ray diffraction suggest that the films are c-axis oriented with the interface relationship of [101]Mn:BZT//[100]LAO and (001)Mn:BZT //(001)LAO. The microwave dielectric property measurements (13–17.5 GHz) reveal that the films have excellent dielectric properties with large tunability, high dielectric constant, and low dielectric loss, which the average value is 25.9%, 169 and 0.054, respectively. It is indicated that the additional 2% Mn doped Ba(Zr0.2Ti0.8)O3 thin films can be used for the development of the room temperature tunable microwave elements and related device applications.

Inclusive pages
65-69
ISBN/ISSN
0731-5171
Comments

The document available for download is the authors' accepted manuscript, provided in compliance with publisher policies on self-archiving and with author permission; permission documentation is on file.

Publisher
Taylor & Francis Group
Peer Reviewed
Yes
Keywords
  • Ferroelectric,
  • dielectric,
  • thin films,
  • epitaxial,
  • Ba(Zr,
  • Ti)O3,
  • microwave
Citation Information
Ming Liu, Chunrui Ma, Jian Liu, Gregory Collins, et al.. "Microwave Dielectric Properties of Epitaxial Mn-doped Ba(Zr,Ti)O-3 Thin Films on LaAlO3 Substrates" Ferroelectrics Letters Section Vol. 40 Iss. 1-3 (2013)
Available at: http://works.bepress.com/guru_subramanyam/13/