Article
On the Nitrogen Vacancy in GaN
Applied Physics Letters
Document Type
Article
Publication Date
10-1-2003
Disciplines
Abstract
The dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV donor. Since only N-sublattice displacements can be produced at this energy, and since theory predicts that the N interstitial is a deep acceptor in n-type GaN, we argue that the 70 meV donor is most likely the isolated N vacancy. The background shallow donors, in the 24–26 meV range, actually decrease in concentration, probably due to interactions with mobile N interstitials that are produced by the irradiation. Thus, the recent assignment of a photoluminescence (PL) line as an exciton bound to a 25 meV N-vacancy donor is incompatible with our results. Moreover, we do not observe that PL line in our sample.
DOI
10.1063/1.1623009
Citation Information
David C. Look, Gary C. Farlow, P. J. Drevinsky, D. F. Bliss, et al.. "On the Nitrogen Vacancy in GaN" Applied Physics Letters Vol. 83 Iss. 17 (2003) p. 3525 - 3527 ISSN: 0003-6951 Available at: http://works.bepress.com/gary_farlow/3/
Copyright © 2003, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 83.17, and may be found at http://apl.aip.org/resource/1/applab/v83/i17/p3525_s1