Article
Radiation Hardness of ZnO at Low Temperatures
Semiconductor Science and Technology
Document Type
Article
Publication Date
6-1-2004
Disciplines
Abstract
In situ Hall-effect measurements have been carried out on vapour-phase-grown, n-type ZnO irradiated with 1.0 and 1.5 MeV electrons in the [000-1] direction. The electrical properties change very little during irradiation at temperatures as low as 130 K, the lowest temperature presently attainable under 1 MeV, 0.3 muA cm(-2) irradiation. It is concluded that long-term damage in ZnO is limited by defect annihilations that are rapid on the time scale of the experiment (min), even at 130 K.
DOI
10.1088/0268-1242/19/6/016
Citation Information
Cevdet Coşkun, David C. Look, Gary C. Farlow and J. R. Sizelove. "Radiation Hardness of ZnO at Low Temperatures" Semiconductor Science and Technology Vol. 19 Iss. 6 (2004) p. 752 - 754 ISSN: 0268-1242 Available at: http://works.bepress.com/gary_farlow/14/