Many point-defect-related centers have been investigated in electron-irradiated 6H-SiC by deep-level transient spectroscopy (DLTS). Most of them are believed to be related to vacancies. Our DLTS studies on deep centers produced by electron-irradiation (EI) in conductive epi-6H-SiC are in agreement with the literature data. However, for semi-insulating SiC, DLTS cannot be used for trap studies so we have applied thermally stimulated current (TSC) spectroscopy. At least nine TSC traps have been observed in high-purity/semi-insulating (HPSI) 6H-SiC. To understand the nature of these centers, 1-MeV EI and postirradiation annealing at 600 degrees C were applied to the sample. The TSC spectroscopy and 4.2 K photoluminescence (PL) have been used to study the effects of El and annealing on the centers in HPSI 6H-SiC. It was found that (1) some of the major EI-induced DLTS centers in conductive 6H-SiC, such as EDI, E-1/E-2, E-i Z(1)/Z(2) and L-9, have TSC counterparts even in as-grown HPSI 6H-SiC; (2) EI-induced TSC centers in HPSI 6H-SiC are due to point defects, which have been confirmed by typical PL lines (such as S, L, and V lines); and (3) the concentration of the 1.1-eV center, which controls material conductivity, can be increased by 1-MeV El and decreased by 600 degrees C annealing.