Article
Influence of defects on nanotube transistor performance
Applied Physics Letters
(2006)
Abstract
We study the effect of vacancies and charged impurities on the performance of carbon nanotube transistors by self-consistently solving the three-dimensional Poisson and Schrödinger equations. We find that a single vacancy or charged impurity can decrease the drive current by more than 25% from the ballistic current. The threshold voltage shift in the case of charged impurities can be as large as 40 mV.
Disciplines
Publication Date
2006
Publisher Statement
© 2006 American Institute of Physics
Citation Information
Eric Polizzi, Neophytos Neophytou, Diego Kienle and M. P Anantram. "Influence of defects on nanotube transistor performance" Applied Physics Letters Vol. 88 Iss. 24 (2006) Available at: http://works.bepress.com/eric_polizzi/4/