A High Power, High Efficiency Amplifier using GaN HEMT
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Abstract
A class B and a class F power amplifier are described using a GaN HEMT device. They both were designed to operate at a frequency of 1.7 GHz with the same bias conditions. The performances of each amplifier were successfully simulated and compared. A class B amplifier was physically implemented and achieved a high power-added-efficiency of 69.2%, 39.9 dBm output power and associated gain of 14.9 dB. The experimental results were in close agreement to the simulation results.
Suggested Citation
Bumjin Kim, Dennis Derickson, and Cheng Sun. "A High Power, High Efficiency Amplifier using GaN HEMT" Proceedings of the Asia-Pacific Microwave Conference: Bangkok, Thailand.. Dec. 2007.
Available at: http://works.bepress.com/ddericks/7
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