High-Frequency Electrooptic Fabry-Perot Modulators
Copyright © 1991 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. The definitive version is available online at: http://dx.doi.org/10.1109/68.91018.
NOTE: At the time of publication, the author Dennis Derickson was not yet affiliated with Cal Poly.
Electrooptic modulators built from GaAs/AlxGa1-xAs Fabry-Perot cavities operating up to 6.5 GHz are reported. The measured frequency response agrees well with the one predicted using an equivalent circuit model derived from high-speed electrical measurements. The parasitic capacitances have been reduced to approximately 30 fF by fabricating the devices on semi-insulating GaAs substrates and integrating them with on-wafer bound pads which have dimensions compatible with microwave coplanar probes.
R. J. Simes, R. H. Yan, C. C. Barron, Dennis J. Derickson, D. G. Lishan, Judy R. Karin, L. A. Coldren, M. Rodwell, S. Elliott, and B. Hughes. "High-Frequency Electrooptic Fabry-Perot Modulators" IEEE Photonics Technology Letters 3.6 (1991): 513-515.
Available at: http://works.bepress.com/ddericks/32