Efficient Single-Heterojunction Al_0.27Ga_0.73As/GaAs p-i-n Photodiodes with 22-GHz Bandwidths

C. Johnson, Hewlett-Packard Co., Santa Rosa, CA
S. Sloan, Hewlett-Packard Co., Santa Rosa, CA
D. M. Braun, Hewlett-Packard Co., Santa Rosa, CA
J. L. Russell, Hewlett-Packard Co., Santa Rosa, CA
M. Zurakowski, Hewlett-Packard Co., Santa Rosa, CA
M. Lightner, Hewlett-Packard Co., Santa Rosa, CA
F. Kellert, Hewlett-Packard Co., Santa Rosa, CA
G. Patterson, Hewlett-Packard Co., Santa Rosa, CA
R. Koo, Hewlett-Packard Co., Rohnert Park, CA
Dennis J. Derickson, University of California - Santa Barbara
J. E. Bowers, University of California - Santa Barbara

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Copyright © 1991 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. The definitive version is available online at: http://dx.doi.org/10.1109/16.119043

NOTE: At the time of publication, the author Dennis Derickson was not yet affiliated with Cal Poly.

Abstract

A report is presented on the design, fabrication, testing, and modeling of single-heterojunction Al_0.27Ga_0.73As/Ga p-i-n photodiodes for use as components in optical receivers. The photodiodes are grown by molecular beam epitaxy and fabricated as 1100-μm² mesa structures. At 5-V reverse bias and 850 nm, 100 fF of capacitance, 90 pA of leakage current, 73% external quantum efficiency, <2% reflectivity, and 22-GHz bandwidths are typically measured.