Light-Emitting Diodes from Partially Conjugated Poly(p-phenylene vinylene)

C. Zhang, University of California at Santa Barbara
David Braun, University of California at Santa Barbara
A. J. Heeger, University of California at Santa Barbara

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Copyright © 1993 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at http://dx.doi.org/10.1063/1.353794 .

NOTE: At the time of publication, the author David Braun was not yet affiliated with Cal Poly.

Abstract

We report the effect of conversion conditions on the device characteristics of poly(p-phenylene vinylene) (PPV) light-emitting diodes. Both electroluminescence and photoluminescence intensities decrease with increasing degree of conversion. Partial conjugation enhances the electroluminescence intensity and gives an efficiency (with Ca as electron-injecting contact) as high as 0.75% photons per electron, about two orders of magnitude more efficient than from similar devices prepared from fully converted PPV. The results of constant current stress measurements suggest that the partially conjugated PPV diode is relatively stable at room temperature.