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Single-Event Charge Enhancement in SOI Devices

David V. Kerns, Franklin W. Olin College of Engineering
Sherra E. Kerns, Franklin W. Olin College of Engineering
L W. Massengill
M L. Alles

Article comments

© 1990 Institute of Electrical and Electronics Engineers. This article was published in IEEE Electron Device Letters, vol. 11, iss. 2, p. 98-99 and may be found here.

Abstract

Studies are presented of single-particle ion effects in body-tied CMOS/silicon-on-insulator (SOI) devices. It is shown that two mechanisms can contribute to SOI soft-error rates: a direct ion-induced photocurrent and a local lateral bipolar current. The total amount of charge collected is sensitive to the relative locations of the ion strike and the body-to-source tie.

Suggested Citation

David V. Kerns, Sherra E. Kerns, L W. Massengill, and M L. Alles. "Single-Event Charge Enhancement in SOI Devices" IEEE Electron Device Letters 11.2 (1990): 98-99.
Available at: http://works.bepress.com/david_kerns/4