Reported is a novel vacuum field emission transistor (VFET) differential amplifier (diff-amp) utilising nanocrystalline diamond emitters with self-aligned gate partitions. The integrated VFET diff-amp was fabricated by a dual-mask self-aligned mould transfer method in conjunction with chemical vapour deposited nanodiamond. Identical pairs of devices with well-matched field emission transistor characteristics were obtained, realising a negligible common-mode gain, high differential-mode gain, and large common-mode rejection ratio (CMRR) of 55 dB. The emission current was validated by a modified Fowler-Nordheim equation in transistor configuration, and the CMRR was modelled by an equivalent half-circuit with the calculated result found to agree well with the experimental value.
- CMRR,
- VFET diff-amp,
- chemical vapour deposited nanodiamond,
- common-mode gain,
- common-mode rejection ratio,
- differential-mode gain,
- dual-mask self-aligned mould transfer method,
- emission current,
- equivalent half-circuit,
- modified Fowler-Nordheim equation,
- nanocrystalline diamond emitters,
- self-aligned gate partitions,
- transistor configuration,
- vacuum field emission transistor,
- vacuum microelectronic integrated differential amplifier,
- chemical vapour deposition,
- diamond,
- differential amplifiers,
- field effect transistors,
- nanostructured materials,
- vacuum microelectronics
Available at: http://works.bepress.com/david_kerns/17/
© 2012 Institution of Engineering and Technology. This article was published in Electronics Letters, vol. 48, iss. 19, p. 1219-1220 and may be found here.