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Single crystal Fe films grown on Ge(001) substrates by magnetron sputtering

J. Lou
A. Daigle
L. Chen
Y. Q. Wu
V. G. Harris, Northeastern University
C. Vittoria, Northeastern University
N. X. Sun

Article comments

Originally published in Applied Physics Letters 89, 112501 (2006). DOI:10.1063/1.2339041 (http://dx.doi.org/10.1063/1.2339041).

Abstract

Single crystal Fe films were grown on Ge (001) substrates by using dc magnetron sputtering. It was found that the microstructures and magnetic properties of Fe films on Ge substrates were strongly dependent upon the substrate temperature during the deposition process. There existed a narrow substrate temperature window of 125 ± 25°C for achieving single crystal Fe film on Ge. Lower substrate temperature led to polycrystalline Fe films due to limited mobility of Fe atoms, while higher substrate temperatures resulted in amorphous Fe-Ge alloy due to severe interdiffusion.

Suggested Citation

J. Lou, A. Daigle, L. Chen, Y. Q. Wu, V. G. Harris, C. Vittoria, and N. X. Sun. "Single crystal Fe films grown on Ge(001) substrates by magnetron sputtering" Electrical and Computer Engineering Faculty Publications (2006).
Available at: http://works.bepress.com/cvittoria/106

single_crystal_fe_fig1.zip (164 kB)
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single_crystal_fe_fig5.zip (13 kB)
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