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MOS Translinear Principle for All Inversion Levels

Bradley A. Minch, Franklin W. Olin College of Engineering

Article comments

© 2008 IEEE. This article was published in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 55, iss. 2, pages 121 - 125 and may be found here.

Abstract

In this brief, we derive a translinear principle for alternating loops of saturated MOS transistors that is valid at all levels of inversion starting from a simplified version of the Enz-Krummanacher-Vittoz model of the MOS transistor. This generalized translinear principle reduces to the conventional one when all transistors in a translinear loop are biased in weak inversion and it reduces to the voltage-translinear principle when all transistors in the loop are biased in strong inversion. We show experimental measurements from an alternating loop of four nMOS transistors that was fabricated in a 0.5-mum CMOS process through MOSIS to corroborate the generalized translinear principle. Finally, we discuss some potential applications of the principle.

Suggested Citation

Bradley A. Minch. "MOS Translinear Principle for All Inversion Levels" IEEE Transactions on Circuits and Systems II: Express Briefs 55.2 (2008): 121-125.
Available at: http://works.bepress.com/bradley_minch/3