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Neutron dosimetry with planar silicon p-i-n diodes

A. Rosenfeld, University of Wollongong
M. Yudelev, Wayne State University, Detroit
M. L. Lerch, University of Wollongong
I. Cornelius, University of Wollongong
P. Griffin, Sandia National Laboratory, Albuquerque, USA
V. L. Perevertailo, SPA-BIT "Detector", Kiev, Ukraine
I. E. Anokhin, Institute for Nuclear Research, Kiev, Ukraine
O. S. Zinets, Institute for Nuclear Research, Kiev, Ukraine
V. I. Khivrich, Institute for Nuclear Research, Kiev, Ukraine
M. Pinkovskaya, Institute for Nuclear Research, Kiev, Ukraine
D. Alexiev, ANSTO, Australia
M. Reinhard, ANSTO, Australia

Article comments

This article was originally published as: Rosenfeld, AB, Yudelev, M, Lerch, MLF et al, Neutron dosimetry with planar silicon p-i-n diodes, IEEE Transactions on Nuclear Science, December 2003, 50(6)1, 2367-2372. Copyright IEEE 2003.

Abstract

New nonionizing energy losses (NIEL) sensors based on silicon planar p-i-n diodes of different geometry have been investigated and their response to fast neutron field compared with bulk diodes. The possibility of obtaining a wide range of sensitivities in these NIEL sensors simultaneously with measurements of IEL has been demonstrated.

Suggested Citation

A. Rosenfeld, M. Yudelev, M. L. Lerch, I. Cornelius, P. Griffin, V. L. Perevertailo, I. E. Anokhin, O. S. Zinets, V. I. Khivrich, M. Pinkovskaya, D. Alexiev, and M. Reinhard. "Neutron dosimetry with planar silicon p-i-n diodes" Faculty of Engineering - Papers (2003).
Available at: http://works.bepress.com/arozenfeld/26

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