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Novel Slurry Solutions for Thick Cu CMP

Peter A. Miranda, Boise State University
Jerome A. Imonigie, Boise State University
Aaron L. Erbe, Boise State University
Amy J. Moll, Boise State University

Article comments

This document was originally published by IEEE in 2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. Copyright restrictions may apply.
doi: 10.1109/WMED.2005.1431630

Abstract

Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two-step slurry CMP approach.

Suggested Citation

Peter A. Miranda, Jerome A. Imonigie, Aaron L. Erbe, and Amy J. Moll. "Novel Slurry Solutions for Thick Cu CMP" 2005 IEEE Workshop on Microelectronics and Electron Devices (2005).
Available at: http://works.bepress.com/amy_moll/4