Novel Slurry Solutions for Thick Cu CMP
This document was originally published by IEEE in 2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. Copyright restrictions may apply.
Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two-step slurry CMP approach.
Peter A. Miranda, Jerome A. Imonigie, Aaron L. Erbe, and Amy J. Moll. "Novel Slurry Solutions for Thick Cu CMP" 2005 IEEE Workshop on Microelectronics and Electron Devices (2005).
Available at: http://works.bepress.com/amy_moll/4