Articles «Previous Next»

Parylene-C passivated carbon nanotube flexible transistors

Selvapraba Selvarasah, Northeastern University
Xinghui Li, Northeastern University
Ahmed Busnaina, Northeastern University
Mehmet R. Dokmeci, Northeastern University

Article comments

Originally published in Applied Physics Letters v.97 no.15 (2010), p.153120. doi:10.1063/1.3499758

Abstract

Carbon nanotubes are extremely sensitive to the molecular species in the environment and hence require a proper passivation technique to isolate them against environmental variations for the realization of reliable nanoelectronic devices. In this paper, we demonstrate a parylene-C passivation approach for CNT thin film transistors fabricated on a flexible substrate. The CNT transistors are encapsulated with 1 and 3 μm thick parylene-C coatings, and the transistor characteristics are investigated before and after passivation. Our findings indicate that thin parylene-C films can be utilized as passivation layers for CNT transistors and this versatile technique can be readily applied for the encapsulation of CNT devices such as field effect transistors, p-n diodes, and logic circuits fabricated on flexible substrates.

Suggested Citation

Selvapraba Selvarasah, Xinghui Li, Ahmed Busnaina, and Mehmet R. Dokmeci. "Parylene-C passivated carbon nanotube flexible transistors" Center for High-Rate Nanomanufacturing Publications (2010).
Available at: http://works.bepress.com/abusnaina/10

figure1.zip (3091 kB)
Figure 1

figure2.zip (233 kB)
Figure 2

figure3.zip (277 kB)
Figure 3