Topological electronic structure in half-Heusler topological insulators
Originally published in Physical Review B v.82 (2010): 125208. DOI: 10.1103/PhysRevB.82.125208
We have investigated band structures of a series of 28 ternary half-Heusler compounds MM'X of MgAgAs type, where M=(Lu, La, Sc, Y) and M'X=(PtBi, AuPb, PdBi, PtSb, AuSn, NiBi, PdSb). Our results show that the Z₂ topological order is due to a single band inversion at the Γ point. In native states, these half-Heusler compounds are identified as being topologically nontrivial semimetals, or nontrivial metals, or trivial insulators, which can be turned into insulating thin films on suitable substrates. Our analysis reveals a straightforward relationship which connects the band inversion strength (extent of deviation from the critical point) to the atomic charge of constituents and the lattice parameter. Our findings suggest a general method for identifying Z₂ topological insulators in nonmagnetic ternary compounds.
W. Al-Sawai, Hsin Lin, R. S. Markiewicz, L. A. Wray, Y. Xia, S. Y. Xu, M. Z. Hasan, and A. Bansil. "Topological electronic structure in half-Heusler topological insulators" Physics Faculty Publications (2010).
Available at: http://works.bepress.com/abansil/53